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| BF772 NPN Silicon RF Transistor 3 For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF772 Maximum Ratings Parameter Marking RAs 1=C Pin Configuration 2=E 3=B 4=E Package SOT143 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 80 10 580 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Ambient temperature Storage temperature TS 72 C 1) mA mW C Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 135 K/W 1 Jun-27-2001 BF772 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BF772 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz |S21e|2 14.5 8.5 Gma 17.5 11.5 F 1.3 2.1 Ceb 1.8 Cce 0.25 Ccb 0.6 0.9 fT 6 8 typ. max. Unit GHz pF dB 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-27-2001 |
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